Dark-line-resistant, aluminum-free diode laser at 0.8 mum

Quantum-well, lattice-matched InGaAsP lasers emitting at 0.8 mum are shown to exhibit resistance to < 100 > dark-line growth. This property in conjunction with the aluminum-free device structure augurs well for future high-power diodes and arrays operating near this wavelength

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Bibliographic Details
Published in:IEEE photonics technology letters 1992-12, Vol.4 (12), p.1328-1330
Main Authors: Yellen, S L, Shepard, A H, Harding, C M, Baumann, J A, Waters, R G, Garbuzov, D Z, Pjataev, V, Kochergin, V, Zory, P S
Format: Article
Language:English
Online Access:Get full text
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Description
Summary:Quantum-well, lattice-matched InGaAsP lasers emitting at 0.8 mum are shown to exhibit resistance to < 100 > dark-line growth. This property in conjunction with the aluminum-free device structure augurs well for future high-power diodes and arrays operating near this wavelength
ISSN:1041-1135
DOI:10.1109/68.180565