Buckling of thermally-grown SiO(2)thin films

The difference in thermal expansion causes compression in SiO(2)thermally grown on Si wafers. Unsupported windows of SiO(2)buckle if the oxide thickness/window width ratio (t/w) is too small. This correspondence presents the experimentally determined t/w ratio for stable films.

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 1972-01, Vol.19 (1), p.122-122
Main Authors: Wilmsen, C W, Thompson, E G, Meissner, G H
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The difference in thermal expansion causes compression in SiO(2)thermally grown on Si wafers. Unsupported windows of SiO(2)buckle if the oxide thickness/window width ratio (t/w) is too small. This correspondence presents the experimentally determined t/w ratio for stable films.
ISSN:0018-9383