Buckling of thermally-grown SiO(2)thin films

The difference in thermal expansion causes compression in SiO(2)thermally grown on Si wafers. Unsupported windows of SiO(2)buckle if the oxide thickness/window width ratio (t/w) is too small. This correspondence presents the experimentally determined t/w ratio for stable films.

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 1972-01, Vol.19 (1), p.122-122
Main Authors: Wilmsen, C W, Thompson, E G, Meissner, G H
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 122
container_issue 1
container_start_page 122
container_title IEEE transactions on electron devices
container_volume 19
creator Wilmsen, C W
Thompson, E G
Meissner, G H
description The difference in thermal expansion causes compression in SiO(2)thermally grown on Si wafers. Unsupported windows of SiO(2)buckle if the oxide thickness/window width ratio (t/w) is too small. This correspondence presents the experimentally determined t/w ratio for stable films.
format article
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_28745518</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>28183400</sourcerecordid><originalsourceid>FETCH-LOGICAL-p628-86124845cd3e3adbf80a549a50dc918aea161f9572ed2dc40ecdd2e6e54aea3c3</originalsourceid><addsrcrecordid>eNqNjM1KAzEURrNQaK2-w6xEwUB-btI7Sy3-QaELuy9pctNGMzN1MoP49g7oA7j6OJzDd8bmQkjktUY9YxelvE9oAdSc3T2M_iOn9lB1sRqO1Dcu529-6LuvtnpLmxt1OxxTW8WUm3LJzqPLha7-dsG2T4_b1Qtfb55fV_drfrIKOVqpAMH4oEm7sI8onIHaGRF8LdGRk1bG2iwVBRU8CPIhKLJkYHLa6wW7_r099d3nSGXYNal4ytm11I1lp3AJxkj8RzhFIIT-AWg7S7E</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28183400</pqid></control><display><type>article</type><title>Buckling of thermally-grown SiO(2)thin films</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Wilmsen, C W ; Thompson, E G ; Meissner, G H</creator><creatorcontrib>Wilmsen, C W ; Thompson, E G ; Meissner, G H</creatorcontrib><description>The difference in thermal expansion causes compression in SiO(2)thermally grown on Si wafers. Unsupported windows of SiO(2)buckle if the oxide thickness/window width ratio (t/w) is too small. This correspondence presents the experimentally determined t/w ratio for stable films.</description><identifier>ISSN: 0018-9383</identifier><language>eng</language><ispartof>IEEE transactions on electron devices, 1972-01, Vol.19 (1), p.122-122</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784</link.rule.ids></links><search><creatorcontrib>Wilmsen, C W</creatorcontrib><creatorcontrib>Thompson, E G</creatorcontrib><creatorcontrib>Meissner, G H</creatorcontrib><title>Buckling of thermally-grown SiO(2)thin films</title><title>IEEE transactions on electron devices</title><description>The difference in thermal expansion causes compression in SiO(2)thermally grown on Si wafers. Unsupported windows of SiO(2)buckle if the oxide thickness/window width ratio (t/w) is too small. This correspondence presents the experimentally determined t/w ratio for stable films.</description><issn>0018-9383</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1972</creationdate><recordtype>article</recordtype><recordid>eNqNjM1KAzEURrNQaK2-w6xEwUB-btI7Sy3-QaELuy9pctNGMzN1MoP49g7oA7j6OJzDd8bmQkjktUY9YxelvE9oAdSc3T2M_iOn9lB1sRqO1Dcu529-6LuvtnpLmxt1OxxTW8WUm3LJzqPLha7-dsG2T4_b1Qtfb55fV_drfrIKOVqpAMH4oEm7sI8onIHaGRF8LdGRk1bG2iwVBRU8CPIhKLJkYHLa6wW7_r099d3nSGXYNal4ytm11I1lp3AJxkj8RzhFIIT-AWg7S7E</recordid><startdate>19720101</startdate><enddate>19720101</enddate><creator>Wilmsen, C W</creator><creator>Thompson, E G</creator><creator>Meissner, G H</creator><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QQ</scope><scope>JG9</scope></search><sort><creationdate>19720101</creationdate><title>Buckling of thermally-grown SiO(2)thin films</title><author>Wilmsen, C W ; Thompson, E G ; Meissner, G H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p628-86124845cd3e3adbf80a549a50dc918aea161f9572ed2dc40ecdd2e6e54aea3c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1972</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wilmsen, C W</creatorcontrib><creatorcontrib>Thompson, E G</creatorcontrib><creatorcontrib>Meissner, G H</creatorcontrib><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>Materials Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wilmsen, C W</au><au>Thompson, E G</au><au>Meissner, G H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Buckling of thermally-grown SiO(2)thin films</atitle><jtitle>IEEE transactions on electron devices</jtitle><date>1972-01-01</date><risdate>1972</risdate><volume>19</volume><issue>1</issue><spage>122</spage><epage>122</epage><pages>122-122</pages><issn>0018-9383</issn><abstract>The difference in thermal expansion causes compression in SiO(2)thermally grown on Si wafers. Unsupported windows of SiO(2)buckle if the oxide thickness/window width ratio (t/w) is too small. This correspondence presents the experimentally determined t/w ratio for stable films.</abstract><tpages>1</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0018-9383
ispartof IEEE transactions on electron devices, 1972-01, Vol.19 (1), p.122-122
issn 0018-9383
language eng
recordid cdi_proquest_miscellaneous_28745518
source IEEE Electronic Library (IEL) Journals
title Buckling of thermally-grown SiO(2)thin films
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T19%3A47%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Buckling%20of%20thermally-grown%20SiO(2)thin%20films&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Wilmsen,%20C%20W&rft.date=1972-01-01&rft.volume=19&rft.issue=1&rft.spage=122&rft.epage=122&rft.pages=122-122&rft.issn=0018-9383&rft_id=info:doi/&rft_dat=%3Cproquest%3E28183400%3C/proquest%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-p628-86124845cd3e3adbf80a549a50dc918aea161f9572ed2dc40ecdd2e6e54aea3c3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=28183400&rft_id=info:pmid/&rfr_iscdi=true