High-performance substrate-removed InGaAs Schottky photodetectors

High-performance, vertical In/sub 0.53/Ga/sub 0.47/As Schottky diodes are demonstrated. An InP-substrate removal process exposes the underlying surface of lattice-matched epitaxial layers. The newly exposed surface facilitates ohmic contact and simplifies alignment of the optical input to the active...

Full description

Saved in:
Bibliographic Details
Published in:IEEE photonics technology letters 1998-08, Vol.10 (8), p.1144-1146
Main Authors: Spaziani, S.M., Vaccaro, K., Lorenzo, J.P.
Format: Article
Language:English
Subjects:
Bandwidth
Dark current
Detectors
Epitaxial layers
Indium gallium arsenide
Ohmic contacts
Parasitic capacitance
Passivation
Photodetectors
Schottky diodes
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:High-performance, vertical In/sub 0.53/Ga/sub 0.47/As Schottky diodes are demonstrated. An InP-substrate removal process exposes the underlying surface of lattice-matched epitaxial layers. The newly exposed surface facilitates ohmic contact and simplifies alignment of the optical input to the active detector area. The new process results in low dark current (I/sub d/0.70 A/W). A dual-depletion design is utilized in the active layers of the detector resulting in reduced parallel plate capacitance per unit area. Reduced parallel plate and parasitic capacitance results in high bandwidth (f/sub 3 dB/>20 GHz) for 900-μm 2 detectors. Passivation of photodetectors with silicon dioxide is shown to reduce leakage currents by 50%.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.701530