Circuit applications of high-performance SiGe:C HBTs integrated in BiCMOS technology

• Published in: Applied surface science 2004-03, Vol.224 (1), p.297-305
• Main Authors: Winkler, W, Borngräber, J, Heinemann, B, Rücker, H, Barth, R, Bauer, J, Bolze, D, Drews, J, Ehwald, K.-E, Grabolla, T, Haak, U, Höppner, W, Knoll, D, Krüger, D, Kuck, B, Kurps, R, Marschmeyer, M, Richter, H, Schley, P, Schmidt, D, Scholz, R, Tillack, B, Wolansky, D, Wulf, H.-E, Yamamoto, Y, Zaumseil, P
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Divider; Exact sciences and technology; Integrated circuit; Millimeter-wave; Oscillator; Physics; SiGe:C BiCMOS technology
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2003.08.058

Carbon-doped SiGe (SiGe:C) bipolar devices have been developed and integrated in to a 0.25 μm CMOS platform. The resulting SiGe:C BiCMOS technology offers a wide spectrum of active and passive devices for wireless and wired communication systems. A high-performance variant of the bipolar transistor has been derived from the standard transistors by reduction of some transistor dimensions. With these alterations, f T and f max of the bipolar transistors reaches 120 and 140 GHz, respectively. Circuit applications of the devices are demonstrated. Static and dynamic divider circuits have a maximum input frequency of 62 and 72 GHz, respectively. Integrated LC oscillators with frequencies up to 60 GHz are also demonstrated.