Quantum confinement effect of nanocrystalline GaN films prepared by pulsed-laser ablation under various Ar pressures

Pulsed-laser deposition (PLD) was performed under various Ar pressures to prepare nanocrystalline GaN films without substrate heating or any post-annealing treatment. The X-ray diffraction (XRD) pattern and selected area electron diffraction indicated that the deposited films were hexagonal GaN with...

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Bibliographic Details
Published in:Thin solid films 2005, Vol.471 (1), p.273-276
Main Authors: Yoon, Jong-Won, Sasaki, Takeshi, Roh, Cheong Hyun, Shim, Seung Hwan, Shim, Kwang Bo, Koshizaki, Naoto
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Laser ablation
Laser deposition
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Optical properties
Physics
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Summary:Pulsed-laser deposition (PLD) was performed under various Ar pressures to prepare nanocrystalline GaN films without substrate heating or any post-annealing treatment. The X-ray diffraction (XRD) pattern and selected area electron diffraction indicated that the deposited films were hexagonal GaN with wurtzite structure. High-resolution transmission electron microscopic observation revealed that the particles in GaN films deposited in Ar ambient gas below 50 Pa were smaller than the exciton Bohr radius of GaN (11 nm). Large blueshifts in optical bandgap of the films deposited at lower Ar pressures were observed, indicating strong quantum confinement effects in small GaN particles.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2004.06.123