Monolithic optoelectronic switch based on the integration of a GaAs/AlGaAs heterojunction bipolar transistor and a GaAs vertical-cavity surface-emitting laser

We describe the design and the first experimental demonstration of a monolithic integrated optoelectronic switch combining a GaAs/AlGaAs heterojunction bipolar transistor (HBT) with a vertical-cavity surface-emitting laser (VCSEL). The switch has high current gain (500-700), low power dissipation (2...

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Bibliographic Details
Published in:IEEE photonics technology letters 1993-09, Vol.5 (9), p.1035-1038
Main Authors: Zhou, P., Cheng, J., Zolper, J.C., Lear, K.L., Chalmers, S.A., Vawter, G.A., Leibenguth, R.E., Adams, A.C.
Format: Article
Language:English
Subjects:
426000 - Engineering- Components, Electron Devices & Circuits- (1990-)
AMPLIFICATION
Applied sciences
Circuit properties
DATA
DESIGN
EFFICIENCY
Electric, optical and optoelectronic circuits
ELECTRICAL EQUIPMENT
Electronics
ENERGY LOSSES
ENGINEERING
Exact sciences and technology
EXPERIMENTAL DATA
GAIN
Gallium arsenide
Heterojunction bipolar transistors
HETEROJUNCTIONS
High speed optical techniques
INFORMATION
Integrated optoelectronics
Integrated optoelectronics. Optoelectronic circuits
JUNCTION TRANSISTORS
JUNCTIONS
LASERS
LOSSES
NUMERICAL DATA
Optical and optoelectronic circuits
Optical design
Optical interconnections
Optical switches
Power dissipation
POWER LOSSES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
Surface emitting lasers
SWITCHES
TRANSISTORS
USES
Vertical cavity surface emitting lasers
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Description
Summary:We describe the design and the first experimental demonstration of a monolithic integrated optoelectronic switch combining a GaAs/AlGaAs heterojunction bipolar transistor (HBT) with a vertical-cavity surface-emitting laser (VCSEL). The switch has high current gain (500-700), low power dissipation (27 and 55 mW DC at optical output levels of 0.4 and 1.2 mW, respectively), and a high optical-to-electrical conversion efficiency (150 W/A) under DC bias conditions, thus providing a high-performance electrical-to-optical interface for high-speed optical interconnections.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.257183