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Y-Band (170-260 GHz) Tunable CW IMPATT Diode Oscillators
This paper describes circuit, packaging, and device techniques used in the development of tunable CW IMPATT diode oscillators in the 170-260 GHz range. A quartz standoff package with optimum values for parasitics has been developed. A tuning range of nearly 30 GHz has been achieved with an IMPATT di...
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Published in: | IEEE transactions on microwave theory and techniques 1977-12, Vol.25 (12), p.985-991 |
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container_end_page | 991 |
container_issue | 12 |
container_start_page | 985 |
container_title | IEEE transactions on microwave theory and techniques |
container_volume | 25 |
creator | Chao, C. Bernick, R.L. Nakaji, E.M. Ying, R.S. Weller, K.P. Lee, D.H. |
description | This paper describes circuit, packaging, and device techniques used in the development of tunable CW IMPATT diode oscillators in the 170-260 GHz range. A quartz standoff package with optimum values for parasitics has been developed. A tuning range of nearly 30 GHz has been achieved with an IMPATT diode in such a package. |
doi_str_mv | 10.1109/TMTT.1977.1129261 |
format | article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_28761213</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1129261</ieee_id><sourcerecordid>28761213</sourcerecordid><originalsourceid>FETCH-LOGICAL-c294t-bf1f54d2560e782f26836eaf534f5fca9cce242a268805b52fe287fd883a0a013</originalsourceid><addsrcrecordid>eNpFkE1LAzEQhoMoWKs_QLzkJHpIzWQ3X8faaltoqYeIeAppNoGVbbdu2oP-elNa8DS8M88Mw4PQLdABANVPZmHMALSUOTLNBJyhHnAuiRaSnqMepaCILhW9RFcpfeVYcqp6SH2SZ7ep8ANISpigeDL9fcRmv3GrJuDRB54t3obG4HHdVgEvk6-bxu3aLl2ji-iaFG5OtY_eX1_MaErmy8lsNJwTz3S5I6sIkZcV44IGqVhkQhUiuMiLMvLonfY-sJK53FeUrziLgSkZK6UKRx2Foo_uj3e3Xfu9D2ln13XyIX-xCe0-2UwLYFBkEI6g79qUuhDttqvXrvuxQO3BkT04sgdH9uQo79wdd-oQwj9_mv4Beh9ekQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28761213</pqid></control><display><type>article</type><title>Y-Band (170-260 GHz) Tunable CW IMPATT Diode Oscillators</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Chao, C. ; Bernick, R.L. ; Nakaji, E.M. ; Ying, R.S. ; Weller, K.P. ; Lee, D.H.</creator><creatorcontrib>Chao, C. ; Bernick, R.L. ; Nakaji, E.M. ; Ying, R.S. ; Weller, K.P. ; Lee, D.H.</creatorcontrib><description>This paper describes circuit, packaging, and device techniques used in the development of tunable CW IMPATT diode oscillators in the 170-260 GHz range. A quartz standoff package with optimum values for parasitics has been developed. A tuning range of nearly 30 GHz has been achieved with an IMPATT diode in such a package.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.1977.1129261</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aerospace electronics ; Current density ; Diodes ; Doping profiles ; Neodymium ; Oscillators ; Skin ; Space charge ; Substrates ; Temperature</subject><ispartof>IEEE transactions on microwave theory and techniques, 1977-12, Vol.25 (12), p.985-991</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c294t-bf1f54d2560e782f26836eaf534f5fca9cce242a268805b52fe287fd883a0a013</citedby><cites>FETCH-LOGICAL-c294t-bf1f54d2560e782f26836eaf534f5fca9cce242a268805b52fe287fd883a0a013</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1129261$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,54771</link.rule.ids></links><search><creatorcontrib>Chao, C.</creatorcontrib><creatorcontrib>Bernick, R.L.</creatorcontrib><creatorcontrib>Nakaji, E.M.</creatorcontrib><creatorcontrib>Ying, R.S.</creatorcontrib><creatorcontrib>Weller, K.P.</creatorcontrib><creatorcontrib>Lee, D.H.</creatorcontrib><title>Y-Band (170-260 GHz) Tunable CW IMPATT Diode Oscillators</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>This paper describes circuit, packaging, and device techniques used in the development of tunable CW IMPATT diode oscillators in the 170-260 GHz range. A quartz standoff package with optimum values for parasitics has been developed. A tuning range of nearly 30 GHz has been achieved with an IMPATT diode in such a package.</description><subject>Aerospace electronics</subject><subject>Current density</subject><subject>Diodes</subject><subject>Doping profiles</subject><subject>Neodymium</subject><subject>Oscillators</subject><subject>Skin</subject><subject>Space charge</subject><subject>Substrates</subject><subject>Temperature</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1977</creationdate><recordtype>article</recordtype><recordid>eNpFkE1LAzEQhoMoWKs_QLzkJHpIzWQ3X8faaltoqYeIeAppNoGVbbdu2oP-elNa8DS8M88Mw4PQLdABANVPZmHMALSUOTLNBJyhHnAuiRaSnqMepaCILhW9RFcpfeVYcqp6SH2SZ7ep8ANISpigeDL9fcRmv3GrJuDRB54t3obG4HHdVgEvk6-bxu3aLl2ji-iaFG5OtY_eX1_MaErmy8lsNJwTz3S5I6sIkZcV44IGqVhkQhUiuMiLMvLonfY-sJK53FeUrziLgSkZK6UKRx2Foo_uj3e3Xfu9D2ln13XyIX-xCe0-2UwLYFBkEI6g79qUuhDttqvXrvuxQO3BkT04sgdH9uQo79wdd-oQwj9_mv4Beh9ekQ</recordid><startdate>19771201</startdate><enddate>19771201</enddate><creator>Chao, C.</creator><creator>Bernick, R.L.</creator><creator>Nakaji, E.M.</creator><creator>Ying, R.S.</creator><creator>Weller, K.P.</creator><creator>Lee, D.H.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19771201</creationdate><title>Y-Band (170-260 GHz) Tunable CW IMPATT Diode Oscillators</title><author>Chao, C. ; Bernick, R.L. ; Nakaji, E.M. ; Ying, R.S. ; Weller, K.P. ; Lee, D.H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c294t-bf1f54d2560e782f26836eaf534f5fca9cce242a268805b52fe287fd883a0a013</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1977</creationdate><topic>Aerospace electronics</topic><topic>Current density</topic><topic>Diodes</topic><topic>Doping profiles</topic><topic>Neodymium</topic><topic>Oscillators</topic><topic>Skin</topic><topic>Space charge</topic><topic>Substrates</topic><topic>Temperature</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chao, C.</creatorcontrib><creatorcontrib>Bernick, R.L.</creatorcontrib><creatorcontrib>Nakaji, E.M.</creatorcontrib><creatorcontrib>Ying, R.S.</creatorcontrib><creatorcontrib>Weller, K.P.</creatorcontrib><creatorcontrib>Lee, D.H.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chao, C.</au><au>Bernick, R.L.</au><au>Nakaji, E.M.</au><au>Ying, R.S.</au><au>Weller, K.P.</au><au>Lee, D.H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Y-Band (170-260 GHz) Tunable CW IMPATT Diode Oscillators</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>1977-12-01</date><risdate>1977</risdate><volume>25</volume><issue>12</issue><spage>985</spage><epage>991</epage><pages>985-991</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>This paper describes circuit, packaging, and device techniques used in the development of tunable CW IMPATT diode oscillators in the 170-260 GHz range. A quartz standoff package with optimum values for parasitics has been developed. A tuning range of nearly 30 GHz has been achieved with an IMPATT diode in such a package.</abstract><pub>IEEE</pub><doi>10.1109/TMTT.1977.1129261</doi><tpages>7</tpages></addata></record> |
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ispartof | IEEE transactions on microwave theory and techniques, 1977-12, Vol.25 (12), p.985-991 |
issn | 0018-9480 1557-9670 |
language | eng |
recordid | cdi_proquest_miscellaneous_28761213 |
source | IEEE Electronic Library (IEL) Journals |
subjects | Aerospace electronics Current density Diodes Doping profiles Neodymium Oscillators Skin Space charge Substrates Temperature |
title | Y-Band (170-260 GHz) Tunable CW IMPATT Diode Oscillators |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-23T20%3A39%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Y-Band%20(170-260%20GHz)%20Tunable%20CW%20IMPATT%20Diode%20Oscillators&rft.jtitle=IEEE%20transactions%20on%20microwave%20theory%20and%20techniques&rft.au=Chao,%20C.&rft.date=1977-12-01&rft.volume=25&rft.issue=12&rft.spage=985&rft.epage=991&rft.pages=985-991&rft.issn=0018-9480&rft.eissn=1557-9670&rft.coden=IETMAB&rft_id=info:doi/10.1109/TMTT.1977.1129261&rft_dat=%3Cproquest_cross%3E28761213%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c294t-bf1f54d2560e782f26836eaf534f5fca9cce242a268805b52fe287fd883a0a013%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=28761213&rft_id=info:pmid/&rft_ieee_id=1129261&rfr_iscdi=true |