Complementary AlGaAs/GaAs HBT I(2)L (CHI(2)L)technology

The monolithic integration of non-self-aligned AlGaAs/GaAs N-p-n and P-n-p HBTs with selective organometallic vapor-phase epitaxy (OMVPE) has been utilized to demonstrate a low-power high-speed integrated injection logic (I(2)L) technology. Seventeen-stage ring oscillators with a logic swing of 0.7...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 1992-04, Vol.13 (4), p.180-182
Main Authors: Enquist, P M, Slater, D B, Swart, I W
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The monolithic integration of non-self-aligned AlGaAs/GaAs N-p-n and P-n-p HBTs with selective organometallic vapor-phase epitaxy (OMVPE) has been utilized to demonstrate a low-power high-speed integrated injection logic (I(2)L) technology. Seventeen-stage ring oscillators with a logic swing of 0.7 V exhibited a delay of 65 ps per gate with power dissipation of 13 mW per gate for a speed-power product of 850 fJ. This value was in excellent agreement with SPICE simulations based on extracted device parameters which predicted a speed-power product of 840 fJ. Additional simulations predicated a 28-fJ speed-power product and more than a factor of 2 reduction in gate delay with improved epitaxial design and use of submicrometer emitters and self-aligned processing
ISSN:0741-3106
DOI:10.1109/55.145013