Deposition of CeO(2) buffer layers for YBCO coated conductors on biaxially textured Ni substrates by MOCVD technique

CeO(2) buffer layers for YBa(2)Cu(3)O(7)(YBCO) coated conductors were deposited on biaxially textured Ni substrates by metalorganic chemical vapor deposition (MOCVD) method. The variables were the oxygen partial pressure (P/O2/), deposition temperature and time. The [200] texture of CeO(2) was forme...

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Published in:IEEE transactions on applied superconductivity 2003-06, Vol.13 (2), p.2555-2558
Main Authors: Kim, Ho-Jin, Joo, Jinho, Ji, Bong Ki, Jun, Byung-Hyuk, Jung, Choong-Hwan, Park, Soon-Dong, Park, Hai-Woong, Hong, Gye-Won, Kim, Chan-Joong
Format: Article
Language:English
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Summary:CeO(2) buffer layers for YBa(2)Cu(3)O(7)(YBCO) coated conductors were deposited on biaxially textured Ni substrates by metalorganic chemical vapor deposition (MOCVD) method. The variables were the oxygen partial pressure (P/O2/), deposition temperature and time. The [200] texture of CeO(2) was formed at T = 500 deg C - 520 deg C, t = 3 - 15 min and P/O2/ = 2.30 torr, while the [111] and [200] texture were competitively formed at other condition. The surface roughness of CeO(2) films was as good as 5 - 15 nm up to 500 deg C, while it rapidly increased as a result of grain growth of the CeO(2) at T /ges/ 520 deg C. The surface roughness of the CeO(2) films also increased as the deposition time increased. The growth rate of the CeO(2) films at T = 520 deg C and P/O2/ = 2.30 torr was 200 nm/min, which is much higher than those prepared by other physical deposition methods.
ISSN:1051-8223
DOI:10.1109/TASC.2003.811846