Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR

Far infrared magnetooptical investigations of shallow donors in epitaxial MOCVD GaN layers show two types of shallow donors. In relaxed layers, a donor with an ionization energy of 35 meV was found. In strained, undoped and Si doped samples, a donor with ionization energy 32.5 meV was observed. From...

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Published in:MRS Internet journal of nitride semiconductor research 1998, Vol.3, Article e33
Main Authors: Witowski, A. M., Sadowski, M. L., Paku ,a, K., Suchanek, B., Stepniewski, R., Baranowski, Jacek M., Potemski, M., Martinez, G., Wyder, P.
Format: Article
Language:English
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Summary:Far infrared magnetooptical investigations of shallow donors in epitaxial MOCVD GaN layers show two types of shallow donors. In relaxed layers, a donor with an ionization energy of 35 meV was found. In strained, undoped and Si doped samples, a donor with ionization energy 32.5 meV was observed. From the p state splitting in magnetic field, the cyclotron effective mass for conduction electrons was found to be m*=0.222 m 0 .
ISSN:1092-5783
1092-5783
DOI:10.1557/S1092578300001058