Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR

Far infrared magnetooptical investigations of shallow donors in epitaxial MOCVD GaN layers show two types of shallow donors. In relaxed layers, a donor with an ionization energy of 35 meV was found. In strained, undoped and Si doped samples, a donor with ionization energy 32.5 meV was observed. From...

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Published in:MRS Internet journal of nitride semiconductor research 1998, Vol.3, Article e33
Main Authors: Witowski, A. M., Sadowski, M. L., Paku ,a, K., Suchanek, B., Stepniewski, R., Baranowski, Jacek M., Potemski, M., Martinez, G., Wyder, P.
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cited_by cdi_FETCH-LOGICAL-c317t-d7d0193c4dab863b871917633eb657cce7600acc15bef7d3377d30c82d8843d3
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container_title MRS Internet journal of nitride semiconductor research
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creator Witowski, A. M.
Sadowski, M. L.
Paku ,a, K.
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Martinez, G.
Wyder, P.
description Far infrared magnetooptical investigations of shallow donors in epitaxial MOCVD GaN layers show two types of shallow donors. In relaxed layers, a donor with an ionization energy of 35 meV was found. In strained, undoped and Si doped samples, a donor with ionization energy 32.5 meV was observed. From the p state splitting in magnetic field, the cyclotron effective mass for conduction electrons was found to be m*=0.222 m 0 .
doi_str_mv 10.1557/S1092578300001058
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title Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR
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