Realization of an n-channel GaAs/AlGaAs bistable transistor (BISFET)

The first realization of a novel heterostructure device, the bistable field-effect transistor (BISFET), is reported. The device uses an n-channel GaAs/AlGaAs inversion channel structure. It contains a positive feedback loop between the gate and source terminals, which is activated above a gate volta...

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Bibliographic Details
Published in:IEEE electron device letters 1993-08, Vol.14 (8), p.385-387, Article 385
Main Authors: Ojha, J.J., Simmons, J.G., Mand, R.S., SpringThorpe, A.J.
Format: Article
Language:English
Subjects:
Feedback loop
FETs
Gallium arsenide
Heterojunctions
Hysteresis
Optical bistability
Optical devices
Optical feedback
Switches
Voltage
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Summary:The first realization of a novel heterostructure device, the bistable field-effect transistor (BISFET), is reported. The device uses an n-channel GaAs/AlGaAs inversion channel structure. It contains a positive feedback loop between the gate and source terminals, which is activated above a gate voltage of 1.7 V. This leads to abrupt transitions between high- and low-current states as the drain voltage is changed, with a switching ratio of 1.5. The transitions are accompanied by sharp changes in gate current as the feedback loop turns on and off. These transitions, referred to as switch up and switch down, form a large hysteresis loop in the drain characteristics. Hysteresis as large as 3.7 V is observed, making the device strongly bistable.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.225587