Measurement of the thickness of dielectric thin films on silicon photodetectors using the angular response to incident linearly polarized light

A simple and accurate technique for measuring the thickness of dielectric thin films on solid state photodetectors is described. It is based on the angle-of-incidence-dependent response of the detector to incident p(TM)- or s(TE)-polarized monochromatic light. The method is applied to determine the...

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Bibliographic Details
Published in:IEEE transactions on instrumentation and measurement 1994-12, Vol.43 (6), p.799-802
Main Authors: Azzam, R.M.A., Howlader, M.M.K.
Format: Article
Language:English
Subjects:
Applied sciences
Dielectric measurements
Dielectric thin films
Electronics
Exact sciences and technology
Optical films
Optical polarization
Photodetectors
Photodiodes
Reflectivity
Semiconductor films
Silicon
Testing, measurement, noise and reliability
Thickness measurement
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Summary:A simple and accurate technique for measuring the thickness of dielectric thin films on solid state photodetectors is described. It is based on the angle-of-incidence-dependent response of the detector to incident p(TM)- or s(TE)-polarized monochromatic light. The method is applied to determine the thickness of SiO/sub 2/ films on planar-diffused Si photodiodes to within /spl plusmn/1 nm.< >
ISSN:0018-9456
1557-9662
DOI:10.1109/19.368064