Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitors

In this letter, we report on the electrical characteristic and the comparison of the metal-insulator-metal (MIM) capacitors with PECVD silicon nitride (SiN) and silicon oxynitride (SiON). Both capacitors are found to exhibit low leakage and high breakdown field strength, as well as absence of disper...

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Bibliographic Details
Published in:IEEE electron device letters 2003-08, Vol.24 (8), p.506-508
Main Authors: Ng, C.H., Chew, K.W., Chu, S.F.
Format: Article
Language:English
Subjects:
Breakdown
Capacitance
Capacitors
Chemical vapor deposition
Dielectrics
Electric breakdown
Field strength
Linearity
MIM capacitors
Q factor
Quality factor
Radio frequency
Semiconductor films
Silicon compounds
Silicon nitride
Silicon oxynitride
Voltage
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Summary:In this letter, we report on the electrical characteristic and the comparison of the metal-insulator-metal (MIM) capacitors with PECVD silicon nitride (SiN) and silicon oxynitride (SiON). Both capacitors are found to exhibit low leakage and high breakdown field strength, as well as absence of dispersive behavior, good linearity, and comparable quality factor behaviors.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2003.815154