Control of coercivity in NiFe films for single-level masking bubble devices

Methods of reducing H c in thick NiFe films deposited on evaporated Au have been studied for applications in conductor-first single-level masking bubble device fabrication. Results obtained using surface modification techniques, such as ion implantation, plasma etching, and semiconducting intermedia...

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Bibliographic Details
Published in:IEEE transactions on magnetics 1979-03, Vol.15 (2), p.997-999
Main Authors: Kie Ahn, Tuxford, A.
Format: Article
Language:English
Subjects:
Coercive force
Conductive films
Etching
Fabrication
Gold
Ion implantation
Plasma applications
Plasma devices
Plasma immersion ion implantation
Semiconductor films
Citations: Items that this one cites
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Description
Summary:Methods of reducing H c in thick NiFe films deposited on evaporated Au have been studied for applications in conductor-first single-level masking bubble device fabrication. Results obtained using surface modification techniques, such as ion implantation, plasma etching, and semiconducting intermediate layers (TiO x ) are described. In addition, the performance of actual 5-μm and 2-μm devices is discussed.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.1979.1060292