Submicron p-channel (Al,Ga)As/(In,Ga)As HIGFETs

Submicron p-channel (Al,Ga)As/(In,Ga)As HIGFETs have been optimized for application to high-performance complementary GaAs circuits. Major issues with submicron and deep submicron (L/sub g//spl les/0.5-/spl mu/m) P-channel HIGFETs have been the severe short-channel effects, such as high subthreshold...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1997-07, Vol.44 (7), p.1040-1045
Main Authors: Abrokwah, J.K., Lucero, R., Hallmark, J.A., Bernhardt, B.
Format: Article
Language:English
Subjects:
Circuits
Conductivity
Contamination
FETs
Gallium arsenide
Implants
Impurities
Insulation
Subthreshold current
Threshold voltage
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Summary:Submicron p-channel (Al,Ga)As/(In,Ga)As HIGFETs have been optimized for application to high-performance complementary GaAs circuits. Major issues with submicron and deep submicron (L/sub g//spl les/0.5-/spl mu/m) P-channel HIGFETs have been the severe short-channel effects, such as high subthreshold leakage currents and high output conductances. With optimization of the p-type self-aligned implant schedule, control of impurity contamination at the substrate/buffer interfaces and increase of the resistivity of the unintentionally-doped GaAs buffers, high-performance submicron devices have been realized. Typically, 0.5-/spl mu/m P-HIGFETs yielded room temperature transconductances of 90 mS/mm, drain currents at V/sub gs/=V/sub ds/=-1.5 V of 63 mA/mm, and subthreshold leakage currents near 1 nA. Subthreshold slope of 90 mV/decade and output conductances under 5 mS/mm were realized.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.595929