Impact of interface impurities on heterostructure field-effect transistors

The influence of C and Si impurities at the substrate/epitaxy interface on the threshold voltage of GaAs/AlGaAs selectively doped heterostructure transistors has been investigated both experimentally and theoretically using a one-dimensional simulation. The presence of C raises the conduction band r...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1992-11, Vol.39 (11), p.2459-2464
Main Authors: Reynolds, C.L., Vuong, H.H.T., Peticolas, L.J.
Format: Article
Language:English
Subjects:
Applied sciences
Contamination
Electronics
Epitaxial growth
Exact sciences and technology
FETs
Gallium arsenide
HEMTs
Impurities
MODFETs
Molecular beam epitaxial growth
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Substrates
Threshold voltage
Transistors
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Summary:The influence of C and Si impurities at the substrate/epitaxy interface on the threshold voltage of GaAs/AlGaAs selectively doped heterostructure transistors has been investigated both experimentally and theoretically using a one-dimensional simulation. The presence of C raises the conduction band relative to the Fermi level and reduces the electron density in the channel. This results in a positive shift of the depletion-mode (DFET) threshold voltage as the interfacial C concentration increases. For low C concentrations the DFET threshold voltage decreases with increasing Si at the interface. The impact of interfacial C and Si is small on the enhancement-mode (EFET) threshold voltage.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.163458