Image and color recognition using amorphous silicon p–i–n photodiodes

Large area hydrogenated amorphous silicon single and stacked p–i–n structures with low conductivity doped layers are proposed as monochrome and color image sensors. The layers of the structures are based on amorphous silicon alloys (a-Si x C 1− x :H). The current–voltage characteristics and the spec...

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Bibliographic Details
Published in:Sensors and actuators. A. Physical. 2005-09, Vol.123, p.326-330
Main Authors: Louro, Paula, Vieira, Manuela, Fantoni, Alessandro, Fernandes, Miguel, Nunes de Carvalho, C., Lavareda, G.
Format: Article
Language:English
Subjects:
Amorphous silicon
Bias
Color
Color detection
Electric potential
Image sensor
Photodiode
Sensors
Voltage
Wavelengths
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Summary:Large area hydrogenated amorphous silicon single and stacked p–i–n structures with low conductivity doped layers are proposed as monochrome and color image sensors. The layers of the structures are based on amorphous silicon alloys (a-Si x C 1− x :H). The current–voltage characteristics and the spectral sensitivity under different bias conditions are analyzed. The output characteristics are evaluated under different read-out voltages and scanner wavelengths. To extract information on image shape, intensity and color, a modulated light beam scans the sensor active area at three appropriate bias voltages and the photoresponse in each scanning position (“sub-pixel”) is recorded. The investigation of the sensor output under different scanner wavelengths and varying electrical bias reveals that the response can be tuned, thus enabling color separation. The operation of the sensor is exemplified and supported by a numerical simulation.
ISSN:0924-4247
1873-3069
DOI:10.1016/j.sna.2005.03.050