A theory of high-frequency distortion in bipolar transistors

High-frequency distortion in bipolar transistors is examined by using the charge-control approach of Poon and Narayanan (H.C. Poon, IEEE Trans. Electron Dev., vol. ED-19, pp. 719-731, 1972; S. Narayanan and H.C. Poon, IEEE Trans. Circuit Theory, vol. CT-20, pp. 341-351, 1973; H.C. Poon, IEEE Trans....

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2003-02, Vol.51 (2), p.448-461
Main Authors: Vaidyanathan, M., Iwamoto, M., Larson, L.E., Gudem, P.S., Asbeck, P.M.
Format: Article
Language:English
Subjects:
Bipolar transistors
Cancellation
Circuits
Development
Distortion
Frequency
Harmonic distortion
Heterojunctions
Intermodulation distortion
Linearity
Microwaves
Nonlinear distortion
Optimization
Semiconductor devices
Voltage
Wireless communication
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Summary:High-frequency distortion in bipolar transistors is examined by using the charge-control approach of Poon and Narayanan (H.C. Poon, IEEE Trans. Electron Dev., vol. ED-19, pp. 719-731, 1972; S. Narayanan and H.C. Poon, IEEE Trans. Circuit Theory, vol. CT-20, pp. 341-351, 1973; H.C. Poon, IEEE Trans. Electron Dev., vol. ED-21, pp. 110-112, 1974) to connect the device's distortion behavior to its "loaded" unity-current-gain frequency (/spl omega//spl circ//sub T/). The resulting expressions for the distortion reveal considerable information on its frequency and bias dependence. Points on the /spl omega//spl circ//sub T/ versus collector current curve yielding optimum distortion performance are identified and interpreted in terms of current cancellation. Both second- and third-order distortion are considered, and the results are validated by both simulation and experiment.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2002.807821