Giant magnetocurrent in silicon-base magnetic tunneling transistor

A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p–n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base cur...

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Bibliographic Details
Published in:Journal of magnetism and magnetic materials 2004-11, Vol.282 (1), p.279-282
Main Authors: Huang, Y.W., Lo, C.K., Yao, Y.D., Hsieh, L.C., Ju, J.J., Huang, D.R., Huang, J.H.
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronics
Exact sciences and technology
Magnetic properties and materials
Magnetic tunneling junction
Magnetocurrent
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Spin transistor
Transistors
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Summary:A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p–n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base current caused by external magnetic field is from 1.9 to 123nA. The working principle of this silicon-base MTT can be described by a circuit theory.
ISSN:0304-8853
DOI:10.1016/j.jmmm.2004.04.065