Loading…
Giant magnetocurrent in silicon-base magnetic tunneling transistor
A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p–n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base cur...
Saved in:
Published in: | Journal of magnetism and magnetic materials 2004-11, Vol.282 (1), p.279-282 |
---|---|
Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | cdi_FETCH-LOGICAL-c420t-3eed45c5739b9899a7f144a1f14d5e6c0413a42f543e75c1175313d570ffa7133 |
---|---|
cites | cdi_FETCH-LOGICAL-c420t-3eed45c5739b9899a7f144a1f14d5e6c0413a42f543e75c1175313d570ffa7133 |
container_end_page | 282 |
container_issue | 1 |
container_start_page | 279 |
container_title | Journal of magnetism and magnetic materials |
container_volume | 282 |
creator | Huang, Y.W. Lo, C.K. Yao, Y.D. Hsieh, L.C. Ju, J.J. Huang, D.R. Huang, J.H. |
description | A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p–n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base current caused by external magnetic field is from 1.9 to 123nA. The working principle of this silicon-base MTT can be described by a circuit theory. |
doi_str_mv | 10.1016/j.jmmm.2004.04.065 |
format | article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_28819948</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0304885304004822</els_id><sourcerecordid>28195174</sourcerecordid><originalsourceid>FETCH-LOGICAL-c420t-3eed45c5739b9899a7f144a1f14d5e6c0413a42f543e75c1175313d570ffa7133</originalsourceid><addsrcrecordid>eNqNkE1LxDAQhnNQcF39A5560VtrPtsEvOiiq7DgRc8hm06XlDZdk1Tw39uyC95UGGYIeeZleBC6IrggmJS3bdH2fV9QjHkxVylO0AIzzHMpBTtD5zG2GGPCZblAD2tnfMp6s_OQBjuGANPT-Sy6ztnB51sT4fjtbJZG76FzfpelYHx0MQ3hAp02potweZxL9P70-LZ6zjev65fV_Sa3nOKUM4CaCysqprZKKmWqhnBuyNRrAaXFnDDDaSM4g0pYQirBCKtFhZvGVISxJbo55O7D8DFCTLp30ULXGQ_DGDWVkijF5T9AogSp-ATSA2jDEGOARu-D60340gTr2aVu9exSzy71XKWYlq6P6SZa0zWTB-viz2ZZUioo-5ujWEky590dOJjcfToIOloH3kLtAtik68H9ds43t3uYpQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28195174</pqid></control><display><type>article</type><title>Giant magnetocurrent in silicon-base magnetic tunneling transistor</title><source>ScienceDirect Freedom Collection 2022-2024</source><creator>Huang, Y.W. ; Lo, C.K. ; Yao, Y.D. ; Hsieh, L.C. ; Ju, J.J. ; Huang, D.R. ; Huang, J.H.</creator><creatorcontrib>Huang, Y.W. ; Lo, C.K. ; Yao, Y.D. ; Hsieh, L.C. ; Ju, J.J. ; Huang, D.R. ; Huang, J.H.</creatorcontrib><description>A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p–n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base current caused by external magnetic field is from 1.9 to 123nA. The working principle of this silicon-base MTT can be described by a circuit theory.</description><identifier>ISSN: 0304-8853</identifier><identifier>DOI: 10.1016/j.jmmm.2004.04.065</identifier><identifier>CODEN: JMMMDC</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronics ; Exact sciences and technology ; Magnetic properties and materials ; Magnetic tunneling junction ; Magnetocurrent ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Spin transistor ; Transistors</subject><ispartof>Journal of magnetism and magnetic materials, 2004-11, Vol.282 (1), p.279-282</ispartof><rights>2004</rights><rights>2004 INIST-CNRS</rights><rights>2005 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c420t-3eed45c5739b9899a7f144a1f14d5e6c0413a42f543e75c1175313d570ffa7133</citedby><cites>FETCH-LOGICAL-c420t-3eed45c5739b9899a7f144a1f14d5e6c0413a42f543e75c1175313d570ffa7133</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,780,784,789,790,23930,23931,25140,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16209815$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16622523$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Huang, Y.W.</creatorcontrib><creatorcontrib>Lo, C.K.</creatorcontrib><creatorcontrib>Yao, Y.D.</creatorcontrib><creatorcontrib>Hsieh, L.C.</creatorcontrib><creatorcontrib>Ju, J.J.</creatorcontrib><creatorcontrib>Huang, D.R.</creatorcontrib><creatorcontrib>Huang, J.H.</creatorcontrib><title>Giant magnetocurrent in silicon-base magnetic tunneling transistor</title><title>Journal of magnetism and magnetic materials</title><description>A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p–n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base current caused by external magnetic field is from 1.9 to 123nA. The working principle of this silicon-base MTT can be described by a circuit theory.</description><subject>Applied sciences</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Magnetic properties and materials</subject><subject>Magnetic tunneling junction</subject><subject>Magnetocurrent</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Spin transistor</subject><subject>Transistors</subject><issn>0304-8853</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNqNkE1LxDAQhnNQcF39A5560VtrPtsEvOiiq7DgRc8hm06XlDZdk1Tw39uyC95UGGYIeeZleBC6IrggmJS3bdH2fV9QjHkxVylO0AIzzHMpBTtD5zG2GGPCZblAD2tnfMp6s_OQBjuGANPT-Sy6ztnB51sT4fjtbJZG76FzfpelYHx0MQ3hAp02potweZxL9P70-LZ6zjev65fV_Sa3nOKUM4CaCysqprZKKmWqhnBuyNRrAaXFnDDDaSM4g0pYQirBCKtFhZvGVISxJbo55O7D8DFCTLp30ULXGQ_DGDWVkijF5T9AogSp-ATSA2jDEGOARu-D60340gTr2aVu9exSzy71XKWYlq6P6SZa0zWTB-viz2ZZUioo-5ujWEky590dOJjcfToIOloH3kLtAtik68H9ds43t3uYpQ</recordid><startdate>20041101</startdate><enddate>20041101</enddate><creator>Huang, Y.W.</creator><creator>Lo, C.K.</creator><creator>Yao, Y.D.</creator><creator>Hsieh, L.C.</creator><creator>Ju, J.J.</creator><creator>Huang, D.R.</creator><creator>Huang, J.H.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>H8D</scope></search><sort><creationdate>20041101</creationdate><title>Giant magnetocurrent in silicon-base magnetic tunneling transistor</title><author>Huang, Y.W. ; Lo, C.K. ; Yao, Y.D. ; Hsieh, L.C. ; Ju, J.J. ; Huang, D.R. ; Huang, J.H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c420t-3eed45c5739b9899a7f144a1f14d5e6c0413a42f543e75c1175313d570ffa7133</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Applied sciences</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Magnetic properties and materials</topic><topic>Magnetic tunneling junction</topic><topic>Magnetocurrent</topic><topic>Physics</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Spin transistor</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Huang, Y.W.</creatorcontrib><creatorcontrib>Lo, C.K.</creatorcontrib><creatorcontrib>Yao, Y.D.</creatorcontrib><creatorcontrib>Hsieh, L.C.</creatorcontrib><creatorcontrib>Ju, J.J.</creatorcontrib><creatorcontrib>Huang, D.R.</creatorcontrib><creatorcontrib>Huang, J.H.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aerospace Database</collection><jtitle>Journal of magnetism and magnetic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Huang, Y.W.</au><au>Lo, C.K.</au><au>Yao, Y.D.</au><au>Hsieh, L.C.</au><au>Ju, J.J.</au><au>Huang, D.R.</au><au>Huang, J.H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Giant magnetocurrent in silicon-base magnetic tunneling transistor</atitle><jtitle>Journal of magnetism and magnetic materials</jtitle><date>2004-11-01</date><risdate>2004</risdate><volume>282</volume><issue>1</issue><spage>279</spage><epage>282</epage><pages>279-282</pages><issn>0304-8853</issn><coden>JMMMDC</coden><abstract>A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p–n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base current caused by external magnetic field is from 1.9 to 123nA. The working principle of this silicon-base MTT can be described by a circuit theory.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jmmm.2004.04.065</doi><tpages>4</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0304-8853 |
ispartof | Journal of magnetism and magnetic materials, 2004-11, Vol.282 (1), p.279-282 |
issn | 0304-8853 |
language | eng |
recordid | cdi_proquest_miscellaneous_28819948 |
source | ScienceDirect Freedom Collection 2022-2024 |
subjects | Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronics Exact sciences and technology Magnetic properties and materials Magnetic tunneling junction Magnetocurrent Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Spin transistor Transistors |
title | Giant magnetocurrent in silicon-base magnetic tunneling transistor |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T10%3A45%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Giant%20magnetocurrent%20in%20silicon-base%20magnetic%20tunneling%20transistor&rft.jtitle=Journal%20of%20magnetism%20and%20magnetic%20materials&rft.au=Huang,%20Y.W.&rft.date=2004-11-01&rft.volume=282&rft.issue=1&rft.spage=279&rft.epage=282&rft.pages=279-282&rft.issn=0304-8853&rft.coden=JMMMDC&rft_id=info:doi/10.1016/j.jmmm.2004.04.065&rft_dat=%3Cproquest_cross%3E28195174%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c420t-3eed45c5739b9899a7f144a1f14d5e6c0413a42f543e75c1175313d570ffa7133%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=28195174&rft_id=info:pmid/&rfr_iscdi=true |