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Giant magnetocurrent in silicon-base magnetic tunneling transistor

A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p–n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base cur...

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Published in:Journal of magnetism and magnetic materials 2004-11, Vol.282 (1), p.279-282
Main Authors: Huang, Y.W., Lo, C.K., Yao, Y.D., Hsieh, L.C., Ju, J.J., Huang, D.R., Huang, J.H.
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container_end_page 282
container_issue 1
container_start_page 279
container_title Journal of magnetism and magnetic materials
container_volume 282
creator Huang, Y.W.
Lo, C.K.
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Huang, J.H.
description A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p–n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base current caused by external magnetic field is from 1.9 to 123nA. The working principle of this silicon-base MTT can be described by a circuit theory.
doi_str_mv 10.1016/j.jmmm.2004.04.065
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subjects Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronics
Exact sciences and technology
Magnetic properties and materials
Magnetic tunneling junction
Magnetocurrent
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Spin transistor
Transistors
title Giant magnetocurrent in silicon-base magnetic tunneling transistor
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