Planar laterally oxidized vertical-cavity lasers for low-threshold high-density top-surface-emitting arrays

We introduce a novel device architecture that enables the fabrication of low threshold high density vertical-cavity surface-emitting laser (VCSEL) arrays. Our structure relies on a group of small via holes to access a buried AlGaAs layer for lateral oxidation. In contrast to the conventional method...

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Bibliographic Details
Published in:IEEE photonics technology letters 1997-08, Vol.9 (8), p.1060-1062, Article 1060
Main Authors: Chua, C.L., Thornton, R.L., Treat, D.W.
Format: Article
Language:English
Subjects:
Apertures
Distributed Bragg reflectors
Etching
Mirrors
Optical arrays
Optical device fabrication
Optical surface waves
Semiconductor laser arrays
Surface emitting lasers
Vertical cavity surface emitting lasers
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Summary:We introduce a novel device architecture that enables the fabrication of low threshold high density vertical-cavity surface-emitting laser (VCSEL) arrays. Our structure relies on a group of small via holes to access a buried AlGaAs layer for lateral oxidation. In contrast to the conventional method of exposing mesa sidewalls through etched pillars, this technique provides our VCSEL's with the benefits of oxide confinement without sacrificing wafer planarity. Maintaining wafer planarity is essential for the easy fabrication and contacting of densely packed devices. The devices operate at 827 nm, with a minimum threshold current of 200 μA, and a maximum output power of 3.15 mW.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.605499