Paramagnetic defects in GaN

• Published in: MRS Internet journal of nitride semiconductor research 1998, Vol.3, Article e45
• Main Authors: Palczewska, M., Suchanek, B., Dwili˜ski, R., Paku ,a, K., Wagner, A., Kami˜ska, M.
• Format: Article
• Language: English
• ISSN: 1092-5783; 1092-5783
• DOI: 10.1557/S1092578300001174

In this work, paramagnetic defects in wurtzite GaN crystals were systematically studied using the Electron Spin Resonance (ESR) technique and using electrical measurements. Three different resonance signals were found. The first had g || = 1.9514 ± 0.0005 and g ⊥ = 1.9486 ± 0.0005, a commonly observed defect in n-type crystals ascribed to the shallow donor of GaN [1]. The second ESR signal, an anisotropic line of g || = 2.0728 ± 0.0015 and g ⊥ = 1.9886 ± 0.0015, was observed only in Mg-doped p-type GaN layers, and was assigned to the Mg acceptor. The last ESR resonance signal, an isotropic line with g = 2.0026 ± 0.0005 was observed only in AMMONO GaN crystals after thermal annealing, as well as in Mg-doped GaN epitaxial layers. It was tentatively identified as due to a deep acceptor.