40-Gb/s circuits built from a 120-GHz f/T/ SiGe technology

• Published in: IEEE journal of solid-state circuits 2002-09, Vol.37 (9), p.1106-1114
• Main Authors: Freeman, G, Meghelli, M, Kwark, Y, Zier, S, Rylyakov, A, Sorna, M A, Tanji, T, Schreiber, O M, Walter, K, Rieh, Jae-Sung, Jagannathan, B, Joseph, A, Subbanna, S
• Format: Article
• Language: English
• ISSN: 0018-9200
• DOI: 10.1109/JSSC.2002.801170

Product designs for 40-Gb/s applications fabricated from SiGe BiCMOS technologies are now becoming available. In this paper we first briefly discuss heterojunction bipolar transistor (HBT) device operation at high speed, demonstrating that perceived concerns regarding lower BV/CEO/ and higher current densities required to operate silicon HBTs at such high speeds do not in actuality limit design or performance. The high-speed portions of the 40-Gb/s system are then addressed individually. We demonstrate the digital capability through a 4: 1 multiplexer and a 1 : 4 demultiplexer running over 50 Gb/s error free at a -3.3-V power supply. We also demonstrate a range of analog elements, including a lumped limiting amplifier which operates with a 35-GHz bandwidth, a transimpedance amplifier with 220-/Omega/ gain and 49.1-GHz bandwidth, a 21.5-GHz voltage-controlled oscillator with over -100-dBc/Hz phase noise at 1-MHz offset, and a modulator driver which runs a voltage swing twice the BV/CEO/ of the high-speed SiGe HBT. These parts demonstrate substantial results toward product offerings, on each of the critical high-speed elements of the 40-Gb/s system.