Composition and thickness distribution of HgCdTe molecular beam epitaxy wafers by infrared microscope mapping

A technique based on infrared microscopy and the automatic fitting of the transmissivity curves has been developed to measure the composition and thickness distributions of HgCdTe wafers grown by molecular beam epitaxy (MBE). This technique has the ability to handle many measuring points, provides h...

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Bibliographic Details
Published in:Journal of crystal growth 2005-04, Vol.277 (1), p.78-84
Main Authors: Chang, Yong, Badano, G., Jiang, E., Garland, J.W., Zhao, J., Grein, C.H., Sivananthan, S.
Format: Article
Language:English
Subjects:
A1. Composition
A1. Thickness
A1. Uniformity
A3. Molecular beam epitaxy
B1. HgCdTe
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
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Summary:A technique based on infrared microscopy and the automatic fitting of the transmissivity curves has been developed to measure the composition and thickness distributions of HgCdTe wafers grown by molecular beam epitaxy (MBE). This technique has the ability to handle many measuring points, provides high spatial resolution, and can be used for the routine characterization of the uniformity of HgCdTe grown on CdZnTe and Si-based substrates. The mapping measurements both are helpful for infrared detector fabrication and can help MBE growers adjust growth conditions and optimize equipment configurations to grow large area uniform HgCdTe material. The reason that limits the enhancement of uniformity was also discussed.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2005.01.051