Temperature influence on the growth of gallium nitride by HVPE in a mixed H2/N2 carrier gas

• Published in: Journal of crystal growth 2004-01, Vol.260 (1-2), p.7-12
• Main Authors: TRASSOUDAINE, Agnès, CADORET, Robert, GIL-LAFON, Evelyne
• Format: Article
• Language: English
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Theory and models of film growth; Vapor phase epitaxy; growth from vapor phase
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2003.07.027

The growth of GaN by HVPE has been analysed by means of a thermodynamical and kinetic study. Two mechanisms involved in the growth of (00.1) GaN HVPE have been deduced from the numerous experiments performed on (001) GaAs by the chloride method. The parameters of these two growth mechanisms have been resolved from the experimental variations of HVPE GaN growth rate. Experiments performed in conditions of expected fast etching by HCl, in a mixed H2/N2 carrier gas, led to a new growth mechanism by considering a combined Cl desorption by GaCl as GaCl2 and an etching by HCl. The apparent activation energy of the new Cl desorption reaction is the only new parameter introduced in the third growth mechanism. In this paper, we present the results obtained for the determination of a more accurate value of this new parameter. The growth rate was measured versus the growth temperature for different H2 concentrations in the carrier gas. A quite good agreement was obtained between experimental and theoretical values.