Synthesis and properties of GaO2H nanorods

Gallium oxyhydroxide (GaO2H) nanorods were synthesized from ball-milled gallium nitride (GaN) powders. X-ray diffraction (XRD) revealed that the synthesized GaO2H is orthorhombic crystal structure with lattice constants a=4.588 A, b=9.812 A and c=2.979 A. Transmission electron microscopy (TEM) and c...

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Bibliographic Details
Published in:Materials letters 2004-12, Vol.58 (30), p.3925-3928
Main Authors: Xiao, Hong-Di, Ma, Hong-Lei, Xue, Cheng-Shan, Hu, Wen-Rong, Ma, Jin, Zong, Fu-Jian, Zhang, Xi-Jian, Ji, Feng
Format: Article
Language:English
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Summary:Gallium oxyhydroxide (GaO2H) nanorods were synthesized from ball-milled gallium nitride (GaN) powders. X-ray diffraction (XRD) revealed that the synthesized GaO2H is orthorhombic crystal structure with lattice constants a=4.588 A, b=9.812 A and c=2.979 A. Transmission electron microscopy (TEM) and corresponding selected area electron diffraction (SAED) pattern showed that the surface morphology of GaO2H displayed a single phase particles with short rod, and size range of GaO2H particles is from 10 to 80 nm. Fourier transform infrared (FTIR) confirms that the samples contain the binding of Ga-O and Ga * * * H-O-Ga.
ISSN:0167-577X
DOI:10.1016/j.matlet.2004.08.020