Characteristics of superconducting flux-flow transistors

The operational characteristics and physics of three superconducting thin-film-based transistor structures are compared. The devices are based on the motion of quantized vortices, either Josephson fluxons in a long tunnel junction of Abrikosov fluxons in a superconducting film. The transistor amplif...

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Bibliographic Details
Published in:IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) 1991-03, Vol.27 (2), p.3297-3300
Main Authors: Hohenwarter, G.K.G., Martens, J.S., Thompson, J.H., Beyer, J.B., Nordman, J.E., Ginley, D.S.
Format: Article
Language:English
Subjects:
665411 > Basic Superconductivity Studies-- (1992-)
ABRIKOSOV THEORY
Applied sciences
Circuits
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
Electronics
Exact sciences and technology
GRAIN BOUNDARIES
Impedance
Josephson junctions
JUNCTION TRANSISTORS
JUNCTIONS
Magnetic field measurement
MAGNETIC FIELDS
MAGNETIC FLUX
MICROSTRUCTURE
PARAMETRIC ANALYSIS
PHYSICAL PROPERTIES
Physics
SEMICONDUCTOR DEVICES
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Superconducting devices
SUPERCONDUCTING FILMS
SUPERCONDUCTING JUNCTIONS
Superconducting thin films
SUPERCONDUCTIVITY
Thin film transistors
TRANSISTORS 665412 > Superconducting Devices-- (1992-)
TUNNEL EFFECT
Voltage
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Description
Summary:The operational characteristics and physics of three superconducting thin-film-based transistor structures are compared. The devices are based on the motion of quantized vortices, either Josephson fluxons in a long tunnel junction of Abrikosov fluxons in a superconducting film. The transistor amplification mechanism is accomplished by controlling magnetic field at the boundaries of the structures. An overview of the present understanding of device mechanisms and measured characteristics, including voltampere relations and small and large signal circuit parameters is provided. Demonstrated applications and anticipated limitations are discussed.
ISSN:0018-9464
1941-0069
DOI:10.1109/20.133917