Active mode locking of an erbium-doped fiber laser using an intracavity laser diode device

A ridge waveguide, GaInAsP semiconductor laser chip has been used intracavity as a loss modulator in an erbium-doped fiber laser. Operating at modulation rates of around 500 MHz, typical pulse durations of 40 ps were obtained, with average output powers of up to 10 mW.< >

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Bibliographic Details
Published in:IEEE photonics technology letters 1990-08, Vol.2 (8), p.543-545
Main Authors: Wigley, P.G.J., Babushkin, A.V., Vukusic, J.I., Taylor, J.R.
Format: Article
Language:English
Subjects:
ALLOYS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
Diode lasers
ELECTRONIC EQUIPMENT
ENGINEERING
ERBIUM ADDITIONS
ERBIUM ALLOYS
Erbium-doped fiber lasers
Exact sciences and technology
FIBERS
FUNCTION GENERATORS
Fundamental areas of phenomenology (including applications)
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASER CAVITIES
LASER MATERIALS
Laser mode locking
Laser optical systems: design and operation
LASERS
MATERIALS
MODE LOCKING
Modulation, tuning, and mode locking
Optical fiber devices
OPTICAL FIBERS
Optical pulse generation
Optics
PHOSPHIDES
PHOSPHORUS COMPOUNDS
Physics
PNICTIDES
Pulse amplifiers
PULSE GENERATORS
Pulse modulation
Pump lasers
RARE EARTH ADDITIONS
RARE EARTH ALLOYS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS 426002 > Engineering-- Lasers & Masers-- (1990-)
Waveguide lasers
WAVEGUIDES
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Description
Summary:A ridge waveguide, GaInAsP semiconductor laser chip has been used intracavity as a loss modulator in an erbium-doped fiber laser. Operating at modulation rates of around 500 MHz, typical pulse durations of 40 ps were obtained, with average output powers of up to 10 mW.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.58043