A DC-5 GHz NMOSFET SPDT T/R switch in 0.25-mum SiGe BiCMOS technology

In this paper, the design of a fully integrated DC-5 GHz NMOS single-pole double throw (SPDT) transmit/receive (T/R) switch for radio-frequency (RF) applications in a 0.25-mum SiGe BiCMOS/RFCMOS technology, is presented. The switch insertion loss is < 1.4 dB, the isolation is > 30.1 dB, all ov...

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Bibliographic Details
Published in:Applied surface science 2004-03, Vol.224 (1-4), p.434-438
Main Authors: Crippa, P, Orcioni, S, Ricciardi, F, Turchetti, C
Format: Article
Language:English
Online Access:Get full text
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Summary:In this paper, the design of a fully integrated DC-5 GHz NMOS single-pole double throw (SPDT) transmit/receive (T/R) switch for radio-frequency (RF) applications in a 0.25-mum SiGe BiCMOS/RFCMOS technology, is presented. The switch insertion loss is < 1.4 dB, the isolation is > 30.1 dB, all over the 0-5 GHz band, and the return loss is > 19.9 dB in the 0.8-1 GHz band and is > 10.2 dB in the 0-0.8 GHz and 1-5 GHz bands.
ISSN:0169-4332