A study and optoelectronic verification of AlGaAs/GaAs heterojunction bipolar transistor large-signal characteristics

A hybrid optoelectronic measurement system is constructed and used to obtain the large-signal characteristics of AlGaAs/GaAs heterojunction bipolar transistors. The measurement system utilizes a terahertz-bandwidth electrooptic transducer gated by 100-fs laser pulses to interrogate the time-domain w...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 1993-11, Vol.29 (11), p.2799-2804
Main Authors: Frankel, M.Y., Pavlidis, D., Mourou, G.A.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Electrooptic devices
Exact sciences and technology
Gallium arsenide
Heterojunction bipolar transistors
Lasers and electrooptics
Masers
Optical pulses
Pulse measurements
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Submillimeter wave measurements
Time domain analysis
Transducers
Transistors
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Summary:A hybrid optoelectronic measurement system is constructed and used to obtain the large-signal characteristics of AlGaAs/GaAs heterojunction bipolar transistors. The measurement system utilizes a terahertz-bandwidth electrooptic transducer gated by 100-fs laser pulses to interrogate the time-domain waveforms at the device input and output nodes. A microwave signal phase-locked to the laser pulse-train is used to synchronously excite the device in both small-signal and large-signal regimes. The measurement system is capable of 50-GHz bandwidth and provides time-domain voltage waveforms that can be used directly to verify the time-domain results of the large-signal analysis.< >
ISSN:0018-9197
1558-1713
DOI:10.1109/3.248939