The state-of-the-art in simulation for optimization of SiGe-HBTs

We present the state-of-the-art in simulation for industrial application of heterostructure devices based on the SiGe/Si material system. The work includes a detailed comparison of device simulators and current transport models to be used, and addresses critical modeling issues. Results from two-dim...

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Bibliographic Details
Published in:Applied surface science 2004-03, Vol.224 (1), p.312-319
Main Authors: Palankovski, V, Selberherr, S
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
HBT
Modeling
Numerical simulation
Physics
SiGe
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Summary:We present the state-of-the-art in simulation for industrial application of heterostructure devices based on the SiGe/Si material system. The work includes a detailed comparison of device simulators and current transport models to be used, and addresses critical modeling issues. Results from two-dimensional hydrodynamic analyses of SiGe-heterojunction bipolar transistors (HBTs) with MINIMOS-NT are presented in good agreement with measured data. The examples are chosen to demonstrate technologically important issues which can be addressed and solved by device simulation.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2003.09.036