Formation of polymers in TMGa/NH3/H2 system under GaN growth

We report analysis of gas-phase chemistry and the generation pathways of polymers in a horizontal reactor under metalorganic vaporphase epitaxy of GaN films by using computational fluid dynamics simulations. The simulation model considered radiative heat transfer and the reaction model of TMGa/NH3/H...

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Bibliographic Details
Published in:Journal of crystal growth 2006-04, Vol.289 (2), p.428-432
Main Authors: HIRAKO, Akira, OHKAWA, Kazuhiro
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Vapor phase epitaxy
growth from vapor phase
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Summary:We report analysis of gas-phase chemistry and the generation pathways of polymers in a horizontal reactor under metalorganic vaporphase epitaxy of GaN films by using computational fluid dynamics simulations. The simulation model considered radiative heat transfer and the reaction model of TMGa/NH3/H2 system, including the formation of polymers such as [Ga-N], and [MMGaNH], (n = 2-6). It was found that Ga-N polymers are generated at a temperature region about 700 K, and that the temperature is the boundary between [Ga-N]z dissociation ([Ga-N]2 - > Ga-N) and Ga-N polymerization (such as [Ga-N]2- > [Ga-N]3-6).
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2005.11.125