Vertical cavity surface-emitting semiconductor laser with CW injection laser pumping

Room-temperature CW operation of a GaAs/AlGaAs vertical cavity surface-emitting laser with a resonant periodic gain medium, using a GaAs/AlGaAs diode laser array as a pump source, is discussed. Pumping thresholds as low as 11 mW at 730 nm, output powers as high as 10 mW at 856 nm, and external quant...

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Bibliographic Details
Published in:IEEE photonics technology letters 1990-03, Vol.2 (3), p.156-158
Main Authors: McDaniel, D.L., McInerney, J.G., Raja, M.Y.A., Schaus, C.F., Brueck, S.R.J.
Format: Article
Language:English
Subjects:
360603 > Materials-- Properties
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
DESIGN
Diode lasers
ENGINEERING
GAIN
Gallium arsenide
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER CAVITIES
Laser excitation
LASERS
MATERIALS SCIENCE
OPERATION
Optical arrays
OPTICAL PUMPING
PNICTIDES
Pump lasers
PUMPING
Resonance
SEMICONDUCTOR DEVICES
Semiconductor laser arrays
SEMICONDUCTOR LASERS
SOLID STATE LASERS 426002 > Engineering-- Lasers & Masers-- (1990-)
Surface emitting lasers
Vertical cavity surface emitting lasers
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Summary:Room-temperature CW operation of a GaAs/AlGaAs vertical cavity surface-emitting laser with a resonant periodic gain medium, using a GaAs/AlGaAs diode laser array as a pump source, is discussed. Pumping thresholds as low as 11 mW at 730 nm, output powers as high as 10 mW at 856 nm, and external quantum efficiencies as high as 70% are obtained, with considerably improved temporal and spatial coherence properties compared to the pump laser. This is the first reported operation of such a laser with an efficient, compact pump source, demonstrating its suitability for efficient integration.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.50873