Low-cost circuit solutions for micro- and millimeter-wave systems using commercially available SiGe technologies

• Published in: Applied surface science 2004-03, Vol.224 (1), p.410-418
• Main Authors: Schumacher, Hermann, Abele, Peter, Sönmez, Ertugrul, Schad, Kai-Boris, Trasser, Andreas
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Monolithic microwave integrated circuits; Physics; Silicon–germanium; Wafer level packaging
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2003.08.073

Increased use of wireless technologies for communications and sensing results in spectral overcrowding in the lower GHz range. Spectrum allocations in the upper microwave and in the millimeter-wave ranges are available, yet realizing low-cost circuits, e.g. for the 24 GHz ISM band remains a challenge. We are investigating the use of two Si/SiGe hetero-junction bipolar transistor technologies at Atmel Germany (the commercially available SiGe1 and the emerging SiGe2 processes), combined with compact circuit design and back-end micromachining techniques, for the realization of cost-efficient RF frontend solutions at frequencies above 20 GHz. Results presented here include a fully monolithic receiver IC for 24 GHz, and a 33 GHz oscillator module combined with a thin-film antenna structure using wafer-level integration.