Gallium arsenide photo-MESFET's

Photodetection response measurements performed on normally off GaAs photo-MESFETs are discussed. Two modes were investigated: (i) the normal mode in which the photon energy is greater than the bandgap and the light intensity is sufficient to bias the device above turn-on-threshold, and (ii) the subt...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1990-06, Vol.37 (6), p.1533-1535
Main Authors: Lakshmi, B., Chalapati, K., Srivastava, A.K., Arora, B.M., Subramanian, S., Sharma, D.K.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Energy measurement
Exact sciences and technology
FETs
Gallium arsenide
Lighting
MESFETs
Optical modulation
Optical pulses
Photoconductivity
Photoelectricity
Photonic band gap
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:Photodetection response measurements performed on normally off GaAs photo-MESFETs are discussed. Two modes were investigated: (i) the normal mode in which the photon energy is greater than the bandgap and the light intensity is sufficient to bias the device above turn-on-threshold, and (ii) the subthreshold mode with subband-gap photon energy illumination. In the second mode, the transistor operates by internal photoemission from the metal gate to the semiconductor. In the normal mode, the square root of the drain photocurrent varies as the logarithm of the incident light intensity. The device characteristics for subband-gap illumination have been analyzed, and it is shown that the photocurrent varies linearly with light intensity in this mode.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.106251