A fast noise and Z-parameter transformations between common emitter and common base InP DHBT

A new approach has been developed that uses only a simple set of formulas to transform noise and Z-parameters between common emitter and common base configurations. This technique is based on the typical T-model of InP double-heterojunction bipolar transistor and calculated results agree with the ex...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2002-04, Vol.50 (4), p.1109-1113
Main Authors: Yong Zhong Xiong, Geok-Ing Ng, Wang, Hong, Chee Leong Tan, Fu, J.S.
Format: Article
Language:English
Subjects:
Bipolar transistors
Broadband communication
Circuit design
Circuit noise
DH-HEMTs
Emittance
Heterojunction bipolar transistors
Indium phosphide
Indium phosphides
Low-frequency noise
Mathematical analysis
Microwaves
Noise
Noise figure
Optical noise
Transformations
Transforms
Voltage
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Summary:A new approach has been developed that uses only a simple set of formulas to transform noise and Z-parameters between common emitter and common base configurations. This technique is based on the typical T-model of InP double-heterojunction bipolar transistor and calculated results agree with the experimental results, demonstrating that this approach is useful for many broad-band low-noise communication circuit designs.
ISSN:0018-9480
1557-9670
DOI:10.1109/22.993413