Observation of " capacitance overshoot" in the transientcurrent measurement of polysilicon TFT' s

We have observed and analyzed a new effect in the transient current measurement of polysilicon TFT's: the presence of an "overshoot" in the transient response, which implies a time dependent gate capacitance exceeding C(ox) WL. We have also performed two-dimensional (2-D) transient si...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1999-01, Vol.46 (1), p.134-138
Main Authors: Tam, S W-B, Migliorato, P, Lui, O K B, Quinn, M J
Format: Article
Language:English
Online Access:Get full text
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Summary:We have observed and analyzed a new effect in the transient current measurement of polysilicon TFT's: the presence of an "overshoot" in the transient response, which implies a time dependent gate capacitance exceeding C(ox) WL. We have also performed two-dimensional (2-D) transient simulations to explain the experimental results. Our analysis indicates that a TFT circuit model based on lumped intranodal impedances cannot explain the observed transient current behavior. It follows that the "subtransistor" approach is essential for accurate dynamic circuit simulations
ISSN:0018-9383
DOI:10.1109/16.737451