Gain, refractive index, and alpha-parameter in InGaAs-GaAs SQW broad-area lasers

Gain, refractive index, and the linewidth enhancement factor, or alpha-parameter, are measured in broad-area InGaAs-GaAs single-quantum-well semiconductor lasers using below-threshold amplified spontaneous emission spectra and a far-field filtering technique. The alpha parameter is shown to increase...

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Bibliographic Details
Published in:IEEE photonics technology letters 1996-03, Vol.8 (3), p.322-324
Main Authors: Bossert, D J, Gallant, D
Format: Article
Language:English
Online Access:Get full text
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Summary:Gain, refractive index, and the linewidth enhancement factor, or alpha-parameter, are measured in broad-area InGaAs-GaAs single-quantum-well semiconductor lasers using below-threshold amplified spontaneous emission spectra and a far-field filtering technique. The alpha parameter is shown to increase dramatically with increasing carrier density and wavelength. Modes propagating in the transparent substrate of the lasers are shown to have a significant influence on the measured value of alpha
ISSN:1041-1135
DOI:10.1109/68.481104