Graded-SiGe-base, poly-emitter heterojunction bipolar transistors

Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors (HBTs) fabricated using a low-temperature epitaxial technique to form the SiGe graded-bandgap base layer are discussed. These devices were fabricated on patterned substrates and subjected to annealing cycles used in advanced bipolar processi...

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Bibliographic Details
Published in:IEEE electron device letters 1989-12, Vol.10 (12), p.534-536
Main Authors: Patton, G.L., Harame, D.L., Stork, J.M.C., Meyerson, B.S., Scilla, G.J., Ganin, E.
Format: Article
Language:English
Subjects:
Annealing
Applied sciences
Bipolar transistors
Chemical technology
Electronics
Exact sciences and technology
Germanium silicon alloys
Heterojunction bipolar transistors
Microwave transistors
Photonic band gap
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon germanium
Substrates
Temperature
Transistors
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Summary:Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors (HBTs) fabricated using a low-temperature epitaxial technique to form the SiGe graded-bandgap base layer are discussed. These devices were fabricated on patterned substrates and subjected to annealing cycles used in advanced bipolar processing. These devices, which have base widths under 75 mm, were found to have excellent junction qualities. Due to the small bandgap of SiGe, the collector current at low bias is ten times higher than that for Si-base devices that have a pinched base resistance. This collector current ratio increases to more than 40 at LN/sub 2/ temperature resulting in current gains of 1600 for the SiGe-base transistors despite base sheet resistances as low as 7.5 k Omega / Square Operator .< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.43131