High-power monolithic AlGaN/GaN HEMT oscillator

A monolithic X-band oscillator based on an AlGaN/GaN high electron mobility transistor (HEMT) has been designed, fabricated, and characterized. A common-gate HEMT with 1.5 mm of gate width in conjunction with inductive feedback is used to generate negative resistance. A high Q resonator is implement...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2003-09, Vol.38 (9), p.1457-1461
Main Authors: Kaper, V.S., Tilak, V., Hyungtak Kim, Vertiatchikh, A.V., Thompson, R.M., Prunty, T.R., Eastman, L.F., Shealy, J.R.
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Aluminum gallium nitrides
Coplanar transmission lines
Coplanar waveguides
Gallium nitride
Gallium nitrides
HEMTs
High electron mobility transistors
MODFETs
Negative feedback
Noise
Oscillators
Phase estimation
Phase noise
Semiconductor devices
X-band
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Summary:A monolithic X-band oscillator based on an AlGaN/GaN high electron mobility transistor (HEMT) has been designed, fabricated, and characterized. A common-gate HEMT with 1.5 mm of gate width in conjunction with inductive feedback is used to generate negative resistance. A high Q resonator is implemented with a short-circuit low-loss coplanar waveguide transmission line. The oscillator delivers 1.7 W at 9.556 GHz into 50-/spl Omega/ load when biased at V/sub ds/=30 V and V/sub gs/=-5 V, with dc-to-RF efficiency of 16%. Phase noise was estimated to be -87 dBc/Hz at 100-kHz offset. Low-frequency noise, pushing and pulling figures, and time-domain characterization have been performed. Experimental results show great promise for AlGaN/GaN HEMT MMIC technology to be used in future high-power microwave source applications.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2003.815934