Characterization of fundamental parameters of a semiconductor laser with an injected optical probe

A simple technique using a direct optical probe is demonstrated for parasitic-free characterization of many intrinsic laser parameters, including the relaxation resonance frequency, the relaxation rate, the differential and nonlinear gain parameters, the linewidth enhancement factor, and the carrier...

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Bibliographic Details
Published in:IEEE photonics technology letters 1993-04, Vol.5 (4), p.380-382
Main Authors: Liu, J.M., Simpson, T.B.
Format: Article
Language:English
Subjects:
Bandwidth
Chirp modulation
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Gain
Laser stability
Lasers
Nonlinear optics
Optical modulation
Optics
Physics
Probes
Resonance
Resonant frequency
Semiconductor lasers
Semiconductor lasers
laser diodes
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Summary:A simple technique using a direct optical probe is demonstrated for parasitic-free characterization of many intrinsic laser parameters, including the relaxation resonance frequency, the relaxation rate, the differential and nonlinear gain parameters, the linewidth enhancement factor, and the carrier and photon lifetimes. It consists of a single experimental setup and is broadly applicable to semiconductor lasers of different wavelengths and different dynamic bandwidths.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.212671