Growth and characterization of Zn1-xCdxO films using remote plasma MOCVD

• Published in: Applied surface science 2005-05, Vol.244 (1-4), p.381-384
• Main Authors: ISHIHARA, Junji, NAKAMURA, Atsushi, SHIGEMORI, Satoshi, AOKI, Toru, TEMMYO, Jiro
• Format: Article
• Language: English
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Ii-vi semiconductors; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity); Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of bulk materials and thin films; Photoluminescence; Physics
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2004.10.094

Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan Zn1-xCdxO films were successfully grown by remote plasma enhanced metalorganic chemical vapor deposition (RPEMOCVD) with diethyl zinc, dimethyl cadmium, and oxygen plasma. The Cd composition x in the Zn1-xCdxO films was tuned by changing a flow rate of group-II sources. With increasing the Cd composition x, the crystal structure was changed from wurzite (WZ) to rock-salt (RS). The optical band-gap of the Zn1-xCdO films with the wurzite structure up to x < or = 0.7 varied from 3.3 eV down to 1.9 eV.