Heterojunction bipolar transistor using a (Ga,In)P emitter on a GaAs base, grown by molecular beam epitaxy

We report the first N-p-n heterojunction bipolar transistor (HBT) using a (Ga,In)P/GaAs heterojunction emitter on a GaAs base. This combination is of interest as a potential alternate to (Al,Ga)As/GaAs, because of theoretical predictions of a larger valence band discontinuity and a smaller conductio...

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Bibliographic Details
Published in:IEEE electron device letters 1985-04, Vol.6 (4), p.175-177
Main Authors: Mondry, M.J., Kroemer, H.
Format: Article
Language:English
Subjects:
Applied sciences
Carrier confinement
Conducting materials
Current density
Doping
Electron emission
Electronics
Exact sciences and technology
Gallium arsenide
Heterojunction bipolar transistors
Molecular beam epitaxial growth
Reliability theory
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Substrates
Transistors
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Summary:We report the first N-p-n heterojunction bipolar transistor (HBT) using a (Ga,In)P/GaAs heterojunction emitter on a GaAs base. This combination is of interest as a potential alternate to (Al,Ga)As/GaAs, because of theoretical predictions of a larger valence band discontinuity and a smaller conduction band discontinuity, thus eliminating the need for grading of the emitter/base junction. The structure was grown by molecular beam epitaxy, with the base doping (∼10 19 cm -3 ) far exceeding the n-type doping ∼5 17 cm -3 ) of the (Ga,In)P wide gap emitter (E g = 1.88 eV). Common-emitter current gains of 30 were attained at a current density of 3000 A/cm 2 , the highest current density achieved without burnout.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1985.26087