CMOS voltage reference based on gate work function differences in poly-Si controlled by conductivity type and impurity concentration

A new CMOS voltage reference circuit consisting of two pairs of transistors is presented. One pair exhibits a threshold voltage difference with a negative temperature coefficient (-0.49 mV//spl deg/C), while the other exhibits a positive temperature coefficient (+0.17 mV//spl deg/C). The circuit was...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2003-06, Vol.38 (6), p.987-994
Main Authors: Watanabe, H., Ando, S., Aota, H., Dainin, M., Yong-Jin Chun, Taniguchi, K.
Format: Article
Language:English
Subjects:
Circuits
CMOS
Conductivity
Current measurement
Electric potential
Electrodes
Fluctuations
Gates (circuits)
Impurities
Robustness
Semiconductor devices
Temperature
Threshold voltage
Transistors
Voltage
Voltage control
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Summary:A new CMOS voltage reference circuit consisting of two pairs of transistors is presented. One pair exhibits a threshold voltage difference with a negative temperature coefficient (-0.49 mV//spl deg/C), while the other exhibits a positive temperature coefficient (+0.17 mV//spl deg/C). The circuit was robust to process variations and exhibited excellent temperature independence and stable output voltage. Aside from conductivity type and impurity concentrations of gate electrodes, transistors in the pairs were identical, meaning that the system was robust with respect to process fluctuations. Measurements of the voltage reference circuit without trimming adjustments revealed that it had excellent output voltage reproducibility of within /spl plusmn/2%, low temperature coefficient of less than 80 ppm//spl deg/C, and low current consumption of 0.6 /spl mu/A.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2003.811974