Electrothermal limitations on the current density of high-frequency bipolar transistors

In this paper, electrothermal consequences of downscaling bipolar transistors, reducing the emitter resistance and implementing substrate modifications are examined by means of electrical measurements, numerical simulations and analytical calculations. A formulation is given for the optimum current...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2004-12, Vol.51 (12), p.2175-2180
Main Authors: Nenadovic, N., Nanver, L.K., Slotboom, J.W.
Format: Article
Language:English
Subjects:
Applied sciences
Bipolar transistors
Conductivity
Current
Electronics
emitter resistance
Exact sciences and technology
Heterojunction bipolar transistors
high-frequency (HF) technologies
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon on insulator technology
silicon-on-glass
thermal instability
Transistors
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Summary:In this paper, electrothermal consequences of downscaling bipolar transistors, reducing the emitter resistance and implementing substrate modifications are examined by means of electrical measurements, numerical simulations and analytical calculations. A formulation is given for the optimum current density that can be run through the device and still maintain both sufficient transconductance and thermal stability. This expression sets a theoretical limit on the current density and therefore also on the speed of the given technology node. Particularly the lowering of the emitter resistivity is a trade-off between transconductance and thermal stability, and the optimum choice can be estimated from these results along with the maximum emitter area that will allow unconditional thermal stability.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2004.839754