Local electronic and chemical structure at GaN, AlGaN and SiC heterointerfaces

• Published in: Applied surface science 2005-05, Vol.244 (1), p.257-263
• Main Authors: Brillson, Leonard J., Bradley, Shawn T., Tumakha, Sergey H., Goss, Stephen H., Sun, Xiaoling L., Okojie, Robert S., Hwang, J., Schaff, William J.
• Format: Article
• Language: English
• Subjects: AlGaN; Cathodoluminescence; Cathodoluminescence, ionoluminescence; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; GaN; Interface states; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other luminescence and radiative recombination; Physics; Schottky barriers; SiC; Surface and interface electron states; Surface double layers, schottky barriers, and work functions
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2004.09.172

Defects and intermediate chemical phases at nanoscale heterointerfaces of GaN, AlGaN, and SiC can dominate their macroscopic electronic properties. We have used low energy electron-excited nanoscale luminescence spectroscopy in combination with secondary ion mass spectrometry and internal photoemission spectroscopy to correlate interface physical and electronic properties for a variety of Schottky barrier and heterointerfaces involving these semiconductors. These results demonstrate the key role of initial surface processing and subsequent chemical interaction on the heterointerface electronic states, barriers, and carrier concentrations.