Double heterostructure GaAs/AlGaAs thin film diode lasers on glass substrates

The epitaxial liftoff approach has been attracting increasing interest as an alternative to lattice-mismatched heteroepitaxy. A thin-film GaAs double heterostructure injection diode laser fabricated on a glass substrate by the epitaxial liftoff technique is reported. This presages the integration of...

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Bibliographic Details
Published in:IEEE photonics technology letters 1989-02, Vol.1 (2), p.41-42
Main Authors: Yablonovitch, E., Kapon, E., Gmitter, T.J., Yun, C.P., Bhat, R.
Format: Article
Language:English
Subjects:
Crystalline materials
Diode lasers
Gallium arsenide
Glass
III-V semiconductor materials
Optical fiber communication
Optical materials
Semiconductor thin films
Substrates
Transistors
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Summary:The epitaxial liftoff approach has been attracting increasing interest as an alternative to lattice-mismatched heteroepitaxy. A thin-film GaAs double heterostructure injection diode laser fabricated on a glass substrate by the epitaxial liftoff technique is reported. This presages the integration of the two major optical communication materials, III-V semiconductor crystals with SiO/sub 2/ glass.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.91003