Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency

We have succeeded in fabricating ultra-short 25-nm-gate InAlAs/InGaAs high electron mobility transistors (HEMTs) lattice-matched to InP substrates. The two-step-recessed gate technology and low temperature processing at below 300/spl deg/C allowed the fabrication of such ultra-short gates. DC measur...

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Bibliographic Details
Published in:IEEE electron device letters 2001-08, Vol.22 (8), p.367-369
Main Authors: Yamashita, Y., Endoh, A., Shinohara, K., Higashiwaki, M., Hikosaka, K., Mimura, T., Hiyamizu, S., Matsui, T.
Format: Article
Language:English
Subjects:
Cutoff frequency
Devices
Direct current
Fabrication
Gates
HEMTs
High electron mobility transistors
Indium compounds
Indium gallium arsenide
Indium gallium arsenides
Indium phosphide
MODFETs
Radio frequency
Semiconductor devices
Semiconductors
Substrates
Temperature
Transistors
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Summary:We have succeeded in fabricating ultra-short 25-nm-gate InAlAs/InGaAs high electron mobility transistors (HEMTs) lattice-matched to InP substrates. The two-step-recessed gate technology and low temperature processing at below 300/spl deg/C allowed the fabrication of such ultra-short gates. DC measurements showed that the 25-nm-gate HEMT had good pinchoff behavior. We obtained a cutoff frequency f/sub T/ of 396 GHz, within the range of 400 GHz f/sub T/, for the 25-nm-gate HEMT. This f/sub T/ is the highest value get reported for any type of transistor, and the gate length of 25 nm is the shortest value ever reported for any compound semiconductor transistor that exhibits device operation.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.936345